SiGe BiCMOS technology
The introduction of Silicon-Germanium (SiGe) in the base region of silicon-based bipolar transistors offers improved overall performance at higher operating frequencies. SiGe BiCMOS technology features important advantages such as: 1) inherently high forward current gain; 2) homogeneous high integration of bipolar transistors (HBT) and CMOS; 3) power saving due to a higher fT allowing a lower bias current for a given gain at a given frequency; and 4) lower noise figure and high linearity.
The STMicroelectronics 120-nm SiGe BiCMOS9 process offers a quasi self-aligned (QSA) 160 GHz fT Si/SiGeC HBT, dual VT (high performance / low leakage) and dual gate oxide (1.2 V / 2.5 V) 120-nm CMOS devices, passives, and a 6-level copper back-end. This BiCMOS9 technology was mainly developed for optical networking and wireless applications up to 40 Gb/s - 40 GHz, and is the most advanced high-speed SiGe BiCMOS technology currently in production at STMicroelectronics.
A new technology of STMicroelectronics, 120-nm SiGe BiCMOS9MW, is dedicated to millimeter-wave applications. The SiGe BiCMOS9MW has a 230-GHz fT / 280-GHz fmax HBT, which is achieved with a fully self-aligned (FSA) architecture using selective epitaxial growth of the base. The device features record low minimum noise figures: NFmin of 1.2 dB at 40 GHz and 1.6 dB at 60 GHz. This BiCMOS9MW technology is mainly intended for 60-GHz WLAN, 77-GHz automotive radars and 80-Gb/s optical communications.
For more information please follow the external links below:
Y. Li et al, "High-frequency SiGe MMICs - an Industrial Perspective"
